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Patent
Publication NumberUS 20190131493Filing StatusPatent ApplicationAvailabilityUnknownFiling Date2018-11-09Publication Date2019-05-02
A light emitting device includes a substrate, multiple n-type layers, and multiple p-type layers. The n-type layers and the p-type layers each include a group III nitride alloy. At least one of the n-type layers is a compositionally graded n-type group III nitride, and at least one of the p-type layers is a compositionally graded p-type group III nitride. A first ohmic contact for injecting current is formed on the substrate, and a second ohmic contact is formed on a surface of at least one o…
Patent
Publication NumberUS 20190081193Filing StatusPatent ApplicationAvailabilityUnknownFiling Date2018-11-08Publication Date2019-03-14
An ultraviolet light sensor and method of manufacturing thereof are disclosed. The ultraviolet light sensor includes Group-III Nitride layers adjacent to a silicon wafer with one of the layers at least partially exposed such that a surface thereof can receive UV light to be detected. The Group-III Nitride layers include a p-type layer and an n-type layer, with p/n junctions therebetween forming at least one diode. Conductive contacts are arranged to conduct electrical current through the sens…
Patent
Publication NumberUS 10128410Filing StatusIssued PatentAvailabilityUnknownFiling Date2016-03-10Publication Date2018-11-13
A light emitting device includes a substrate, multiple n-type layers, and multiple p-type layers. The n-type layers and the p-type layers each include a group III nitride alloy. At least one of the n-type layers is a compositionally graded n-type group III nitride, and at least one of the p-type layers is a compositionally graded p-type group III nitride. A first ohmic contact for injecting current is formed on the substrate, and a second ohmic contact is formed on a surface of at least one o…
Patent
Publication NumberUS 10128389Filing StatusIssued PatentAvailabilityUnknownFiling Date2017-09-28Publication Date2018-11-13
An ultraviolet light sensor and method of manufacturing thereof are disclosed. The ultraviolet light sensor includes Group-III Nitride layers adjacent to a silicon wafer with one of the layers at least partially exposed such that a surface thereof can receive UV light to be detected. The Group-III Nitride layers include a p-type layer and an n-type layer, with p/n junctions therebetween forming at least one diode. Conductive contacts are arranged to conduct electrical current through the sens…
Patent
Publication NumberUS 9780239Filing StatusIssued PatentAvailabilityUnknownFiling Date2012-10-24Publication Date2017-10-03
An ultraviolet light sensor and method of manufacturing thereof are disclosed. The ultraviolet light sensor includes Group-III Nitride layers adjacent to a silicon wafer with one of the layers at least partially exposed such that a surface thereof can receive UV light to be detected. The Group-III Nitride layers include a p-type layer and an n-type layer, with p/n junctions therebetween forming at least one diode. Conductive contacts are arranged to conduct electrical current through the sens…
Patent
Publication NumberUS 9660126Filing StatusIssued PatentAvailabilityUnknownFiling Date2011-12-06Publication Date2017-05-23
A photovoltaic device having three dimensional (3D) charge separation and collection, where charge separation occurs in 3D depletion regions formed between a p-type doped group III-nitride material in the photovoltaic device and intrinsic structural imperfections extending through the material. The p-type group III-nitride alloy is compositionally graded to straddle the Fermi level pinning by the intrinsic structural imperfections in the material at different locations in the group III-nitrid…
Patent
Publication NumberUS 9312430Filing StatusIssued PatentAvailabilityUnknownFiling Date2015-05-05Publication Date2016-04-12
A light emitting device includes a substrate, multiple n-type layers, and multiple p-type layers. The n-type layers and the p-type layers each include a group III nitride alloy. At least one of the n-type layers is a compositionally graded n-type group III nitride, and at least one of the p-type layers is a compositionally graded p-type group III nitride. A first ohmic contact for injecting current is formed on the substrate, and a second ohmic contact is formed on a surface of at least one o…
Patent
Publication NumberCN 102576775 BFiling StatusIssued PatentAvailabilityUnknownFiling Date2010-09-07Publication Date2016-03-16
Patent
Publication NumberUS 9275981Filing StatusIssued PatentAvailabilityUnknownFiling Date2014-11-24Publication Date2016-03-01
A semiconductor integrated circuit has one or more integral nitride-type sensors. In one embodiment, an integral nitride-type sensor and a coplanar supplemental circuit are formed from a common silicon substrate base. In another embodiment, an integral nitride-type sensor and a supplemental circuit are integrated in a vertical orientation.
Patent
Publication NumberTW I499069 BFiling StatusIssued PatentAvailabilityUnknownFiling Date2008-06-20Publication Date2015-09-01
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Patents: 41

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