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Patent
Publication NumberUS 10633765Filing StatusIssued PatentAvailabilityUnknownFiling Date2016-04-28Publication Date2020-04-28
A main crucible of molten semiconductor is replenished from a supply crucible maintained such that there are always two phases of solid and liquid semiconductor within the supply crucible. Heat added to melt the solid material results in the solid material changing phase to liquid, but will not result in any significant elevation in temperature of the liquid within the supply crucible. The temperature excursions are advantageously small, being less than that which would cause problems with th…
Patent
Publication NumberUS 10549476Filing StatusIssued PatentAvailabilityUnknownFiling Date2012-09-22Publication Date2020-02-04
A workpiece is transported using a porous belt, which belt delivers a workpiece to a chuck, upon which the workpiece is held by vacuum. The belt can be porous PTFE. A flexible stamp is preheated, before it is applied to a workpiece, by drawing the stamp toward a heated plate, for instance by vacuum.
Patent
Publication NumberUS 20190393375Filing StatusPatent ApplicationAvailabilityUnknownFiling Date2019-09-04Publication Date2019-12-26
A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose…
SEC Filing
Accession Number0001423493-19-000001Form TypeDAcceptance Date2019-12-17
Sold $18,056,354 of $18,056,354 of Equity
Patent
Publication NumberUS 10439095Filing StatusIssued PatentAvailabilityUnknownFiling Date2015-10-14Publication Date2019-10-08
A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant cannot enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose …
Patent
Publication NumberTW I669829 BFiling StatusIssued PatentAvailabilityUnknownFiling Date2015-04-29Publication Date2019-08-21
Semi-conductor wafers with thin and thicker regions at controlled locations may be for Photovoltaics. The interior may be less than 180 microns or thinner, to 50 microns, with a thicker portion, at 180-250 microns. Thin wafers have higher efficiency. A thicker perimeter provides handling strength. Thicker stripes, landings and islands are for metallization coupling. Wafers may be made directly from a melt upon a template with regions of different heat extraction propensity arranged to corresp…
Patent
Publication NumberTW I667700 BFiling StatusIssued PatentAvailabilityUnknownFiling Date2011-12-01Publication Date2019-08-01
An interposer sheet can be used for making semiconductor bodies, such as of silicon, such as for solar cell use. It is free-standing, very thin, flexible, porous and able to withstand the chemical and thermal environment of molten semiconductor without degradation. It is typically of a ceramic material, such as silica, silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbide, silicon carbonitride, silicon oxycarbonitride and others. It is provided between a forming surface of …
Patent
Publication NumberCA 2819144 CFiling StatusIssued PatentAvailabilityUnknownFiling Date2011-12-01Publication Date2019-06-04
An interposer sheet can be used for making semiconductor bodies, such as of silicon, such as for solar cell use. It is free-standing, very thin, flexible, porous and able to withstand the chemical and thermal environment of molten semiconductor without degradation. It is typically of a ceramic material, such as silica, silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbide, silicon carbonitride, silicon oxycarbonitride and others. It is provided between a forming surface of …
Patent
Publication NumberEP 2430653 B1Filing StatusIssued PatentAvailabilityUnknownFiling Date2010-05-07Publication Date2019-03-13
Patent
Publication NumberUS 10072351Filing StatusIssued PatentAvailabilityUnknownFiling Date2015-04-17Publication Date2018-09-11
Semi-conductor wafers with thin and thicker regions at controlled locations may be for Photovoltaics. The interior may be less than 180 microns or thinner, to 50 microns, with a thicker portion, at 180-250 microns. Thin wafers have higher efficiency. A thicker perimeter provides handling strength. Thicker stripes, landings and islands are for metallization coupling. Wafers may be made directly from a melt upon a template with regions of different heat extraction propensity arranged to corresp…
We found 103 documents that match your Search
Patents: 94
SEC Filings: 9

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